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Domestic professional research and development manufacturer of semiconductor devices

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Current Location： Home >> Product >> Discrete Device >> Insulated Gate Bipolar Transistor(IGBT)

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產(chǎn)品型號	PD	IC	VCES	VCE(sat)			VGE(th)				封裝
TYPE	(W)	(A)	(V)	(V)	IC(A)	VGE (V)	VCE(V)	IC(mA)	MIN.	MAX.	Package
clear											TO-220FL TO-247 TO-252 TO-3P

BRGB15N65FL	152	30	650	1.85	15	15	30	1	4.5	6.5	TO-220FL
BRGH15N120D	150	30	1200	2.5	15	15	15	0.6	4.5	6.5	TO-247
BRGH25N120D	350	50	1200	2.45	25	15	15	0.6	4.5	6.5	TO-247
BRGB6N65DP	69	12	650	1.98	6	15	5	1	5.3	5.3	TO-252
BRG10N120D	208	20	1200	2.4	10	15	15	0.4	5.2	6.5	TO-3P
BRG15N120D	186	30	1200	2.5	15	15	15	15	3.5	7.5	TO-3P
BRG20N120D	240	40	1200	2.5	20	15	15	15	3.5	7.5	TO-3P
BRG25N120D	312	50	1200	2.5	25	15	15	15	3.5	7.5	TO-3P
BRG60N60D	310	120	600	2.9	60	15	-	0.5	4	6	TO-3P
BRG60N65D	310	120	650	2.2	60	15	15	0.8	5.3	6.3	TO-3P

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